HIGH-POWER UHF TRANSISTOR BASED ON GALLIUM NITRIDE Russian patent published in 2016 - IPC H01L29/778 

FIELD: electronics.

SUBSTANCE: invention relates to devices of solid-state electronics, particularly, to design of high-power transistors for microwave applications. Disclosed is a power microwave transistor using gallium nitride, which consists of a substrate, a heteroepitaxial structure of gallium nitride compounds deposited on substrate, an electrode comprising source, gate and drain deposited on heteroepitaxial structures and spatially separated from each other, a passivation dielectric film deposited on heteroepitaxial structures between electrode contacts heat sink formed on heteroepitaxial structure, and heat-distributing layer, substrate is made of high-resistance silicon, and heat-spreading layer is disposed between drain contact and heatsink.

EFFECT: invention provides power microwave transistors based on gallium nitride with value of output power level P ≥ 10 W in continuous mode of transmitting signal in ultrahigh frequency range Δf = 8÷10 GHz while simplifying process of manufacturing, as well as reducing required material costs.

2 cl, 3 dwg