POWER TRANSISTOR BASED ON ALN/GAN HETEROSTRUCTURE WITH 2D ELECTRON GAS Russian patent published in 2024 - IPC H01L29/76 H01L29/768 H01L29/772 

FIELD: electricity.

SUBSTANCE: invention relates to solid-state electronics devices, and in particular to the design of a power transistor based on compounds of group III nitrides. Power transistor based on AlN/GaN heterostructure with 2D electron gas consists of a substrate, a GaN buffer layer deposited on the substrate, ultrathin barrier layer AlN ultrathin not more than 7, applied on buffer layer, protective upper layer of GaN, applied on barrier layer, source electrodes, gate and drain, applied on protective layer and spatially separated from each other, passivating layer Si₃N₄, applied on protective layer between electrodes, as well as metallization of the field plate deposited on the passivating layer and electrically connected to the gate, wherein the distance between the gate and the drain, as well as the length of the field plate – interrelated values selected based on the required value of breakdown voltage.

EFFECT: invention enables to obtain a power transistor based on a III-nitride heterostructure, characterized by a layer resistance of less than 250 Ohm/□, with a topology providing breakdown voltage of more than 100 V.

1 cl, 4 dwg