METHOD FOR MANUFACTURING OF A SEMICONDUCTOR DEVICE Russian patent published in 2023 - IPC H01L21/283 

FIELD: electronics.

SUBSTANCE: method of manufacturing a semiconductor device by sequential deposition at a temperature of 250°C and a pressure of 2*10^-5 Pa of a germanium layer 150 nm thick, with a deposition rate of 3 nm/s, a Ni layer 200 nm thick, with a deposition rate of 1 nm/s, followed by the invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing contacts. A method for manufacturing semiconductor devices includes the processes of forming active regions of a field-effect transistor and contacts of such regions. At the same time, according to the invention, the contacts are formed by successive deposition at a temperature of 250°C and a pressure of 2*10^-5 Pa of a germanium layer 150 nm thick with a deposition rate of 3 nm/s, a Ni layer 200 nm thick with a deposition rate of 1 nm/s, followed by annealing at a temperature of 300°C for 15 min in an argon atmosphere.

EFFECT: invention allows to increase the percentage of yield of suitable devices and improve their reliability.

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