METHOD OF PRODUCING PROTECTIVE DIELECTRIC LAYER Russian patent published in 2016 - IPC C23C14/24 C23C14/06 C23C14/08 H01L21/02 

FIELD: chemistry.

SUBSTANCE: invention relates to methods of producing thin-film materials, particularly europium (III) oxide based thin films, and can be used to protect a EuO functional layer. The method of producing a protective dielectric layer of Eu₂O₃ for a semiconductor film obtained on a substrate includes the full oxidation of the surface layer of a EuO semiconductor film grown in an ultrahigh-vacuum chamber in the same chamber in oxygen. The pressure of the oxygen current ranges from 1·10^-9 to 1·10^-6 torr with the temperature of the substrate in the range of 0 to 19°C.

EFFECT: forming an effective protective dielectric layer of Eu₂O₃ on the surface of the functional layer of semiconductor europium oxide EuO, which is capable of preventing the degradation of the functional layer as a result of chemical reaction with the environment.

2 dwg, 1 ex