METHOD OF PRODUCING MONOCRYSTALLINE SIC Russian patent published in 2016 - IPC C30B23/00 C30B29/36 C23C14/24 H01L21/203 

FIELD: chemistry.

SUBSTANCE: invention relates to technology of producing monocrystalline SiC - wide-band gap semiconductor material, used for making integrated microcircuits. Method involves sublimation of SiC source 6 on inoculating plate 5 of monocrystalline SiC, fixed on cover 3 of a growth cell inside a cylindrical channel, formed in a growth cell, when source of SiC 6 is placed in cavity, formed by walls of growth cell, cylindrical channel and bottom 4 of growth cell, and passage of vapour phase of SiC source through wall of cylindrical channel, wherein growth cell is made of multiple, arranged in series one above another, sections 1 for arrangement of SiC source 6 and section 2 for forming ingot of monocrystalline SiC, in form of hollow graphite cylinder, on which there is cover 3 of growth cell with inoculating plate 5 of monocrystalline SiC, and each of sections 2 for arrangement of SiC source 6 is composed of two cylinders, located coaxially one inside another with radial clearance, inside of which lower edges of cylinders are tightly connected to bottom to form circular chamber for placement of SiC source 6 and inner cylindrical channel of section, wherein height of outer cylinder exceeds height of inner cylinder, and cylindrical channel of growth cell is formed, coaxially in series while placing section 1 for placement of SiC source 6 and section 2 for forming ingot of monocrystalline SiC 4 at bottom of growth cell. Furthermore, costs of carrying out method are reduced due to possibility of repeated use of growth cell by replacing separate degraded sections of growth cell with new ones.

EFFECT: invention increases growth rate of ingot of monocrystalline SiC without deterioration of quality, which increases output of ingots of monocrystalline SiC per unit time.

1 cl, 2 dwg, 1 tbl