METHOD OF MAKING SEMICONDUCTOR STRUCTURES Russian patent published in 2020 - IPC H01L21/263 H01L21/326 

FIELD: electricity.

SUBSTANCE: invention relates to production of semiconductor devices. Method is implemented as follows: on p-Si (10 Ohm*cm) plates with orientation (100), n-type silicon layer with thickness of 80 nm is applied and successively forming 2-layer structure (SiO₂+Si₃N₄), SiO₂ with thickness of 38 nm, silicon nitride Si₃N₄ with thickness of 24 nm, according to standard technology. Formed structure is subjected to electron bombardment energy of 25 keV, dose of (1.6–3.2)*10⁵ C/cm² followed by annealing of high-frequency heating (13.56 MHz) power of 500 watts at an RF generator for 7.5 min, pressure 10^-2 mm Hg.

EFFECT: invention provides reduction of leakage currents in semiconductor structures, and also ensures manufacturability, improved parameters of structures, high quality and high percentage yield.

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