METHOD OF ANNEALING SEMICONDUCTOR STRUCTURES Russian patent published in 2024 - IPC H01L21/324 

FIELD: various technological processes.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to annealing of semiconductor structures. Method of annealing semiconductor structures involves formation of a semiconductor layer on a semiconductor substrate with subsequent annealing. According to the invention, a semiconductor layer – silicon – with thickness of 100 nm is formed on a semiconductor substrate – silicon – by means of high-frequency ion sputtering using a gas mixture of Ar-H₂-AsH₃ (80:19:1), at pressure of 1.2 Pa and substrate temperature 190 °C with subsequent annealing using a Q-switched ruby laser, with radiation wavelength 694.3 nm, pulse duration 20 ns, energy density 0.6–1.5 J/cm².

EFFECT: invention ensures reduction of leakage currents in semiconductor structures, providing manufacturability, improvement of parameters of structures, improvement of quality and increase in yield percentage.

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