METHOD OF THIN FILM TRANSISTOR MANUFACTURING Russian patent published in 2015 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: method of thin-film transistor manufacturing is suggested that includes processes for forming active areas of the device and layer of amorphous silicon, at that upon formation of the layer of amorphous silicon boron implantation is performed with energy of 30 keV, dose of 51 mcC/cm² with further annealing at temperature of 1373-1423 K during 10 s.

EFFECT: reduced loss current, improved fabricability, instrument parameters and quality, increased percentage yield of serviceable devices.

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