METHOD AND DEVICE FOR PRODUCTION OF SEPARATE NITRIDES CRYSTALS OF III GROUP Russian patent published in 2016 - IPC C23C16/01 C30B25/18 C30B25/08 C30B29/38 C30B33/08 

FIELD: technological processes.

SUBSTANCE: invention relates to production of separate crystals nitrides of Group III elements for electronic and optoelectronic applications. Method involves stages of growth of first layer of nitrides of Group III elements on foreign substrate, treatment first layer of nitrides of Group III elements with laser, growth of second layer of nitrides of Group III elements on first layer of nitrides of Group III elements, separation by laser peeling of second layer of nitrides of Group III elements from substrate, wherein laser treatment of first layer is made inside reactor at temperature of ±50 °C from growth temperature, laser treatment of first layer is selected, at least one of following: cutting, drilling or etching to form grooves, holes or other cavities in first layer and create lower voltage areas between them, stage of separation with help of laser peeling of second layer of nitrides of Group III elements from substrate is made inside reactor at temperature of ±50 °C from growth temperature. Method is realised in reactor containing first zone 8 for epitaxial growth of layers 2.5 nitrides of Group III elements by CVD on foreign substrate 1, second zone 9 for laser processing, which includes laser processing 11 system with front side of layer 2 nitrides of Group III elements to create stress relief area, which is selected, at least from one of following: laser cutting, drilling or etching, and layer 5 peeling system 10 of nitrides of Group III elements from substrate by laser beam, penetrating to layer from back side of substrate.

EFFECT: production of crystals in form of plates with low voltages and low density of defects.

2 cl, 2 dwg