METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/331 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology of manufacturing bipolar transistors with high gain. Technology of the method consists in the following: an epitaxial layer of n-type conductivity is built up on the plates of p-type silicon. Then the base is formed by introducing boron ions through an oxide layer 100 nm thick with an energy of 50–100 keV, a dose of 5*10¹²–2*10¹⁴ cm^-2, followed by heat treatment at a temperature of 900 °C for 30 min. Then, in a standard way, a layer of pyrolytic oxide is deposited in which emitter windows are etched out and a layer of unalloyed polycrystalline silicon 300 nm thick. To form the emitter region, plain polycrystalline silicon is implanted with arsenic ions with an energy of 100 keV, a dose of 1*10¹⁵–6*10¹⁶ cm^-2 and heat treatment is carried out at a temperature of 900–1,000 °C for 1–2 minutes.

EFFECT: increased value of the gain factor, ensured processability, improved instrument parameters, improved quality and percentage of yields.

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