SILICON NITRIDE MANUFACTURING METHOD Russian patent published in 2022 - IPC H01L21/00 

FIELD: semiconductor technology.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology for manufacturing silicon nitride with a reduced defect value. The method is implemented as follows: silicon nitride is formed on a semiconductor Si substrate by passing nitrogen gas N₂ through a mixture of hydrozene N₂H₄ and silane SiH₄ at a substrate temperature of 300°C, gas pressure 15 Pa, silane pressure 10 Pa, the ratio of partial pressures of gaseous sources P_r(N₂H₄+N₂)/P_r(SiH₄)=8 and the deposition rate of silicon nitride 1.5 nm/s, followed by annealing at a temperature of 400°C in in the atmosphere of Ag for 30 minutes . The active regions of the semiconductor device and the electrodes to them were formed according to standard technology.

EFFECT: reduction of defects, ensuring manufacturability, improving the parameters of devices, improving quality and increasing the percentage of usable products.

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