SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/316 

FIELD: instrument engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to production of protective insulating film. In the method of making a semiconductor device on p-type silicon plates of orientation (100), active regions of the device are formed and interconnections are routed for the given device using standard technology. After that, film of silicate glass arsenide is applied on substrate and system of interconnections. Silicate glass arsenide film is formed with thickness of 350 nm with deposition rate of 2.2 nm/s, oxidation of SiH₄ and AsH₃ at temperature 500 °C, feeding into reactor 1 % SiH₄ in an argon flow of 380 cm³/min, 1 % AsH₃ in an argon flow of 50 cm³/min and oxygen of 80–90 cm³/min, followed by annealing at temperature of 600 °C for 50 s.

EFFECT: invention provides reduced value of leakage currents, improved manufacturability and quality, improved parameters of instruments and increased percentage yield.

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