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2 747 421

(13)

(51)

IPC

H01L21/285(2006-01-01)

H01L21/335(2006-01-01)

(21) (22)

Application

2020131443, 2020-09-24

(24)

Start date

2020-09-24

(22)

Actual filing date

2020-09-24

(45)

Published

2021-05-04

(72)

Inventor

Mustafaev Gasan AbakarovichMustafaev Abdulla GasanovichMustafaev Arslan GasanovichCherkesova Natalia Vasilevna

(73)

Holder

Federalnoe Gosudarstvennoe Biudzhetnoe Obrazovatelnoe Uchrezhdenie Vysshego Obrazovaniia Gosudarstvennyi Universitet Im. Kh.M. Berbekova"

METHOD FOR FORMATION OF SILICON OXYNITRIDE Russian patent published in 2021 - IPC H01L21/285 H01L21/335

Abstract RU 2747421 C1

FIELD: chemistry.

SUBSTANCE: invention is a method of forming a silicon oxynitride membrane with a thickness of 50 nm on a silicon substrate at a temperature of 380ºC, a pressure of 133 Pa, and at a flow of SiN₄ – 390 cm³/min, N₂O – 1300 cm³/min and NH₃ – 1200 cm³/min, followed by heat treatment at a temperature of 850ºC for 10 minutes.

EFFECT: invention allows increasing the percentage of yield of suitable devices and improving their reliability.

1 cl

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RU 2 747 421 C1

Authors

Mustafaev Gasan Abakarovich

Mustafaev Abdulla Gasanovich

Mustafaev Arslan Gasanovich

Cherkesova Natalia Vasilevna

Dates

2021-05-04—Published

2020-09-24—Filed