FIELD: materials.
SUBSTANCE: invention relates to a method of atomic layer deposition (ALD) on a substrate and device for ALD. Coated web is supplied into the reaction chamber of the ALD reactor, precursors are supplied into the reaction chamber for application of material on coated web by successive self-limited surface reactions and the first and second rolls of the coated web are installed on the cover the reaction chamber of the ALD reactor. Said device comprises a drive unit configured to move coated web in the reaction chamber of the atomic layer deposition reactor, unit for supply of precursors vapors, configured to provide pulse precursors supply into the reaction chamber for application of material on the coated web by successive self-limited surface reactions, and the cover of the reaction chamber of the ALD reactor, configured to receive first and second rolls of the coated wed.
EFFECT: simplified design of the ALD reactor compared to existing ALD reactors using the roll technology, and optimization of flow rates of precursors, as well as possibility of obtaining the required thickness of applied material directly determined by web rate.
16 cl, 26 dwg
