FIELD: physics; chemistry.
SUBSTANCE: invention relates to production of semiconductor structure, particularly to production of epitaxial silicon film with low defectiveness. Proposed method for manufacturing semiconductor structures by forming a silicon film on a silicon substrate at a growth rate of 20 nm/min at temperature of 750 °C, pressure of 1.33⋅10-5 Pa, silane at feed of 14.3 cm3/min, followed by heat treatment at temperature rate 1100 °C for 15 s in an argon medium increases the percentage yield of suitable structures and improves their reliability.
EFFECT: high percentage yield of non-defective structures and improved reliability thereof.
1 cl, 1 tbl
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Authors
Dates
2020-10-08—Published
2019-04-01—Filed