SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/336 

FIELD: physics; chemistry.

SUBSTANCE: invention relates to production of semiconductor structure, particularly to production of epitaxial silicon film with low defectiveness. Proposed method for manufacturing semiconductor structures by forming a silicon film on a silicon substrate at a growth rate of 20 nm/min at temperature of 750 °C, pressure of 1.33⋅10^-5 Pa, silane at feed of 14.3 cm³/min, followed by heat treatment at temperature rate 1100 °C for 15 s in an argon medium increases the percentage yield of suitable structures and improves their reliability.

EFFECT: high percentage yield of non-defective structures and improved reliability thereof.

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