SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/336 

Abstract RU 2733941 C2

FIELD: physics; chemistry.

SUBSTANCE: invention relates to production of semiconductor structure, particularly to production of epitaxial silicon film with low defectiveness. Proposed method for manufacturing semiconductor structures by forming a silicon film on a silicon substrate at a growth rate of 20 nm/min at temperature of 750 °C, pressure of 1.33⋅10-5 Pa, silane at feed of 14.3 cm3/min, followed by heat treatment at temperature rate 1100 °C for 15 s in an argon medium increases the percentage yield of suitable structures and improves their reliability.

EFFECT: high percentage yield of non-defective structures and improved reliability thereof.

1 cl, 1 tbl

Similar patents RU2733941C2

Title Year Author Number
SEMICONDUCTOR DEVICE MANUFACTURING METHOD 2019
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
  • Cherkesova Natalya Vasilevna
RU2717144C1
SEMICONDUCTOR DEVICE MANUFACTURING METHOD 2018
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
  • Cherkesova Natalya Vasilevna
RU2688863C1
METHOD OF MAKING SEMICONDUCTOR STRUCTURE 2014
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
RU2586009C1
METHOD FOR FORMATION OF SILICON OXYNITRIDE 2020
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
  • Cherkesova Natalia Vasilevna
RU2747421C1
SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD 2019
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
  • Cherkesova Natalya Vasilevna
  • Bagov Artur Mishevich
RU2705516C1
SEMICONDUCTOR DEVICE MANUFACTURING METHOD 2018
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
  • Cherkesova Natalya Vasilevna
RU2688881C1
METHOD OF MAKING A SEMICONDUCTOR DEVICE 2015
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
RU2606248C2
METHOD OF SEMICONDUCTOR DEVICE MANUFACTURING 2016
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
  • Cherkesova Natalya Vasilevna
RU2629657C2
METHOD FOR MANUFACTURING OF A SEMICONDUCTOR DEVICE 2022
  • Mustafaev Gasan Abakarovich
  • Cherkesova Natalya Vasilevna
  • Mustafaev Arslan Gasanovich
  • Khasanov Aslambek Idrisovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Abdulla Gasanovich
RU2804293C1
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 2020
  • Mustafaev Gasan Abakarovich
  • Mustafaev Abdulla Gasanovich
  • Mustafaev Arslan Gasanovich
  • Cherkesova Natalia Vasilevna
RU2752125C1

RU 2 733 941 C2

Authors

Mustafaev Gasan Abakarovich

Mustafaev Abdulla Gasanovich

Mustafaev Arslan Gasanovich

Cherkesova Natalya Vasilevna

Dates

2020-10-08Published

2019-04-01Filed