HETEROSTRUCTURE FORMATION METHOD Russian patent published in 2019 - IPC H01L21/205 

FIELD: instrument engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of heterostructures with low density of defects. Disclosed is a method of forming an InAs heterostructure on GaAs substrates by feeding triethylindium and arsine at substrate temperature 600 °C with arsine flow rate of 15 ml/min, with hydrogen flow rate through bubbler and triethylindium of 2.5 l/min at film growth rate of 1 nm/s with subsequent annealing for 60 s in nitrogen flow at temperature of 700 °C.

EFFECT: disclosed method of forming an InAs heterostructure on GaAs substrates enables to increase the percentage of suitable structures and improves reliability thereof.

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