METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/283 

FIELD: instrument making.

SUBSTANCE: invention relates to semiconductor devices production process, in particular to technology of making contacts with lowered resistance. In method of semiconductor device making contacts are formed on basis of platinum. For this film of platinum with thickness of 35-45 nm is applied by electron-beam evaporation on silicon substrate, heated prior to 350 °C, at rate of deposition of 5 nm/min. Then heat treated in three stages: 1 step is carried out at temperature of 200 °C for 15 minutes, 2 step is carried out at temperature of 300 °C for 10 minutes and 3 stage is at 550 °C for 15 min in forming gas, with mixture of gases N₂:H₂=9:1.

EFFECT: proposed method of semiconductor device making provides reduced contact resistance, high technological effectiveness, improved parameters of devices, high quality and yield.

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