METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH MULTILAYER CONDUCTORS Russian patent published in 2021 - IPC H01L21/28 

FIELD: semiconductors production.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing multilayer conductors with a reduced value of contact resistance. According to the invention, a multilayer Au/Pd/Ni/Ge contact is formed by sequential deposition of a Ge film with a thickness of 20 nm at a pressure of 1*10^-5 Pa, with a deposition rate of 3 nm/s, a nickel Ni film with a thickness of 15 nm at a pressure of 1*10^-5 Pa, with a growth rate of 1 nm/s, followed by deposition of a Pd layer 50 nm thick at a pressure of 1*10^-5 Pa, with a deposition rate of 0.5 nm/s, and Au with a thickness of 100 nm, and heat treatment at a temperature of 450°С in for 2.5 min in a forming gas atmosphere.

EFFECT: invention provides a decrease in contact resistance, an improvement in the parameters of devices and an increase in manufacturability.

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