METHOD OF MAKING A SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/285 

FIELD: electricity.

SUBSTANCE: invention relates to technology for production of semiconductor devices, in particular, to technology of making contacts of a semiconductor device. Method of making the semiconductor device presupposes forming of contacts on the basis of GeMoW with a doped layer of germanium. For formation of contacts at a pressure of 10^-5 Pa one applies a 15 nm-thick layer of arsenic-doped germanium As in a concentration of 10¹⁹-10²⁰ cm^-3 by the method of electron-beam evaporation, and then, using the high-frequency atomization method, one applies a 15-nm layer of Mo and 300-nm layer of tungsten W with density of high-frequency power equal to 0.7 W/cm², pressure of Ar equal to 0.8 Pa, followed by heat treatment in forming gas at a temperature of 800 °C during 7-15 minutes.

EFFECT: invention enables reduction of defects density, higher technological effectiveness, improved parameters of devices, higher reliability and percentage yield.

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