METHOD FOR MANUFACTURING CONTACTS Russian patent published in 2022 - IPC H01L21/283 

FIELD: semiconductor industry.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the technology of manufacturing contacts with low resistance. The method for manufacturing contacts includes applying a titanium film to a p-Si substrate, followed by low-temperature treatment at a temperature of 650°C for 30 seconds in a nitrogen N₂ stream and followed by high-temperature treatment, while according to the invention, a TiN_xO_y/TiSi contact is formed on a p-Si substrate by applying a 70 nm thick Ti film at a speed of 0.5 nm/c, at a substrate temperature of 450°C, a pressure of 10^-5 Pa, followed by low-temperature treatment in a nitrogen stream of N₂ at 200 cm³/min, and the subsequent high-temperature treatment is carried out at a temperature of 950-1050°C for 10 seconds in an atmosphere of ammonia NH₃.

EFFECT: invention provides an opportunity to improve reliability and increase the percentage of yield of suitable devices.

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