METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: invention relates to production of silicide layers with low resistance. Method of making semiconductor device, which involves processes of cleaning silicon plate, creation of active areas of device, annealing and formation of layers, prior to formation of silicide layers, a polycrystalline silicon layer is applied, after which structure is treated with Co⁺ ions with energy 250 keV at ion beam current of 1 mcA, integral dose of 4.4×10¹⁷ cm^-2, followed by relaxation annealing with a scanning electron beam at a temperature of 950 °C for 10-20 s.

EFFECT: reduced resistance, providing processibility, improving parameters, high reliability and percentage yield of non-defective devices.

1 cl, 1 tbl