FIELD: plasma reactors.
SUBSTANCE: invention relates to a microwave plasma reactor, which can be used in mechanical engineering, metallurgy, electronics and/or jewellery industry for coating or film production by plasma-chemical vapor deposition. Microwave (MW) plasma reactor comprises a cylindrical microwave resonator. The input of microwave energy located on the top cover of the resonator is distributed and is made in the form of three rectangular waveguides arranged with azimuthal uniformity. The waveguides have narrow walls facing the central axis of the resonator. Such an arrangement of waveguides makes it possible to obtain a disk-shaped plasma and form a zone on the surface of the substrate holder with uniform film growth conditions in the form of a circle.
EFFECT: reduced overheating of the substrate and provision of uniform film growth conditions.
5 cl, 4 dwg
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