THROUGH-WAFER VIA DEVICE AND METHOD OF MANUFACTURING THE SAME Russian patent published in 2016 - IPC H01L21/768 H01L23/48 H01L23/498 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to device (10) with transition holes in substrate containing substrate (12) made of substrate material and having substrate first surface (12a) and substrate second surface (12b), opposite to substrate first surface (12a). Device (10) with transition holes in substrate also includes plurality of neighboring first grooves (14), equipped with conductive material and passing from substrate first surface (12a) to inside substrate (12), such that a plurality of spacers (16) of the wafer material are formed between first trenches (14). Device (10) with transition holes in substrate also contains second groove (18), equipped with electrically conducting material and passing from substrate second surface (12b) to inside substrate (12). Second trench (18) is being connected to first trenches (14). Device 10 with transition holes in substrate also includes conducting layer (20), made from conducting material and formed on substrate first surface (12a) side, wherein conducting material fills first grooves (14), so that first conducting layer (20) has substantially planar and closed surface, covering filled first trenches and forming an electrical connection between filled trenches.

EFFECT: invention provides a perfected through-wafer via device.

13 cl, 4 dwg