METHOD FOR MANUFACTURING OF A SEMICONDUCTOR DEVICE Russian patent published in 2023 - IPC H01L21/31 

FIELD: semiconductor devices.

SUBSTANCE: method for manufacturing semiconductor devices includes the processes of forming active regions of a field-effect transistor and electrodes for them, a gate dielectric, a protective insulating film and wiring interconnections, while according to the invention, after the formation of the source, drain and gate dielectric regions on the gate dielectric layer, a protective insulating film of the BFSS is formed on the basis of tetraethylorthosilicate, stimulating with nitrogen, at a precipitation temperature of 400°C, at flow rates of tetraethylorthosilicate, trimethylborate and trimethylphosphate equal to 160, 16 and 12 cm³/min, respectively, with a deposition rate of 3 nm/s and an O³/tetroethylorthosilicate ratio of 2.28, followed by heat treatment at a temperature of 600°C for 30 min in an argon atmosphere.

EFFECT: possibility of reducing defectiveness, ensuring manufacturability, improving the parameters of devices and increasing the yield percentage.

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