SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/31 

FIELD: electricity.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to manufacturing of field-effect transistor with low values of leakage currents. Disclosed method of making a semiconductor device by forming a layer of gate oxide with deposition rate of 1.2 nm/s at temperature of 900 °C in a mixture of silane and carbon dioxide at ratio of 1:100 in a stream of hydrogen 24 l/min, with subsequent heat treatment at temperature of 830 °C for 5 minutes in an inert medium, increases percentage output of non-defective devices and improves their reliability.

EFFECT: method of manufacturing a semiconductor device is disclosed.

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