METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Russian patent published in 2021 - IPC H01L21/336 

FIELD: electricity.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing a gate dielectric of a field-effect transistor with a reduced value of the leakage current. The method of a semiconductor device manufacturing includes the processes of forming the active regions of a field-effect transistor, the electrodes to them and the gate dielectric, while according to the invention, the gate dielectric is formed on the basis of erbium oxide by electron-beam evaporation in a vacuum 1*10^-6 Pa with a deposition rate of 0.1 nm/sec, a thickness of 25 nm, followed by oxidation at a temperature of 600-700°С and annealing in the atmosphere of 60% N₂ - 40% Н₂ for 20 minutes.

EFFECT: invention makes it possible to increase the percentage of the output of suitable devices and improve their reliability.

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