FIELD: chemistry.
SUBSTANCE: invention relates to semiconductor detectors of ionising radiation, in particular, to diamond detectors, capable of operating at higher temperatures, low pressures, in aggressive media. Diamond detector of ionising radiation consists of a diamond substrate, active diamond layer, two contact electrodes, arranged on top and below active diamond layer, and leads to supply bias voltage and pickup output signal, wherein lower contact electrode is completely inside active diamond layer, wherein leads to supply bias voltage and pickup output signal are made in form of graphite columns within diamond substrate and active diamond layer with output of contact surfaces on lower side of substrate.
EFFECT: invention prevents leakage and breakdown of crystal surface, which improves resistance of detector to external factors.
1 cl, 2 dwg
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Authors
Dates
2017-01-10—Published
2015-10-27—Filed