METHOD FOR QUALITY CONTROL OF GROUP DOCKING OF CRYSTALS Russian patent published in 2024 - IPC H01L21/66 

FIELD: semiconductor devices.

SUBSTANCE: usage for the assembly of semiconductor devices and can be used for hybridization of multi-element photodetector devices (MEPD) by the inverted mounting method. The essence of the invention lies in the fact that the method of quality control of the group docking of crystals includes the docking of the BIS crystal with the MPSE crystal, visual control of the values of the gaps between the docked BIS and MPSE crystals on the outer sides of the modules, while in order to improve the quality of the docking of crystals by equalizing the values of the gaps of the modules in the entire group assembly, control of the different heights of the rear BIS surfaces of group assembly by measuring profilograms of surfaces, according to the results of which a metered booster of modules with increased gaps is performed.

EFFECT: ensuring the possibility of improving the quality of control of cold welding of crystals with a group method of joining BIS reading crystals with an MPSE crystal.

1 cl, 8 dwg