DEVICE FOR PLASMA-IMMERSION ION IMPLANTATION AT LOW PRESSURE Russian patent published in 2017 - IPC H01J37/32 

FIELD: technological processes.

SUBSTANCE: invention relates to ion implantation using plasma. Device for ion implantation comprises a housing connected to a pumping device; a negatively polarized with HT substrate holder PPS arranged in the said housing; and a plasma feeding device AP made as a cylindrical body passing between the initial section and the locking section. Device also comprises the main chamber PR equipped with an ionization cell BC1, ANT1, herewith the main chamber PR is equipped with a gas supply opening, while the end section of the main chamber is equipped with means for reducing pressure to create a pressure difference relative to the said body. Besides, the plasma feeding device AP additionally comprises an auxiliary chamber AUX arranged outside the end section, herewith the auxiliary chamber is connected with the housing ENV at the locking section.

EFFECT: higher quality of implantation.

14 cl, 4 dwg