METHOD OF MANUFACTURE OF SEMICONDUCTOR STRUCTURES Russian patent published in 2019 - IPC H01L21/322 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures with lower density of defects. Method of manufacturing a semiconductor structure involves carrying diffusion of phosphorus on the reverse side of the plate at 1,100 °C for one hour, followed by deposition of silicon nitride films 200 nm thick at a speed of 10 nm/min on the reverse side of the wafer using RF cathode sputtering at a temperature of 300 °C and subsequent heat treatment at a temperature of 1,000–1,200 °C for one hour in a nitrogen atmosphere with the addition of 1 % oxygen.

EFFECT: reduction of defects, ensuring manufacturability, improving parameters, increasing reliability and increasing the percentage of yield of devices.

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