SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/316 

FIELD: technological processes.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of a gate layer of silicon oxide with low density of defects. Layer of the gate silicon oxide is formed using silane pyrolysis in the presence of carbon dioxide at ratio of (1:100) in a hydrogen stream of 24 l/min, with a growth rate of 3–5 nm/s, at temperature of 1,100 °C, followed by annealing for 3 minutes in a stream of nitrogen at temperature of 570 °C.

EFFECT: reduced density of defects, provision for manufacturability, improved parameters of structures, improved quality and increased percentage yield.

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