METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2019 - IPC H01L21/336 B82B3/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of manufacturing technology of semiconductor devices, in particular, to the manufacturing technology of a gate field-effect transistor with low leakage currents. In the method of manufacturing a semiconductor device on silicon wafers of p-type conductivity with a specific resistance of 10 Ohm*cm, orientation (111), after creating a thin gate oxide according to standard technology, a layer of aluminum oxide 50–80 nm thick is formed from the vapor phase over it over the channel region as a result of the AlCl₃+CO₂+H₂ interaction reaction on the surface of silicon coated with a layer of silicon oxide. Alumina films precipitated at 850 °C at a speed of 12 nm/min followed by heat treatment in a hydrogen atmosphere at a temperature of 500 °C for 5 hours. Then semiconductor devices were manufactured using standard technology.

EFFECT: invention provides a decrease in leakage currents, improved structure parameters, improved manufacturability, quality, and an increase in the yield percentage.

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