METHOD OF CREATING SUPERFINE GRAPHENE STRUCTURES WITH HIGH MOBILITY OF SPIN-POLARIZED CHARGE CARRIERS Russian patent published in 2025 - IPC H01L21/20 

FIELD: performing operations.

SUBSTANCE: invention relates to methods of forming heterostructures. Method of creating ultrafine graphene structures with high mobility of spin-polarized charge carriers, which consists in the fact that by molecular beam epitaxy by deposition of metal atoms on a Graphene/SiO₂/Si(001) heterostructure, in which the silicon oxide layer is preliminarily removed from under the graphene by annealing the heterostructure at temperature T_s=950±20 °C, under graphene on the surface of the Si(001) substrate, a surface phase is formed, which is a submonolayer periodic structure of metal atoms. Surface phase is Gd 1×4, and its formation is carried out by opening the gate of the cell Gd, which ensures deposition of Gd atoms at pressure P_Gd=(0.3÷10)⋅10^-8 Torr of the flow of Gd atoms to the heterostructure maintained at temperature T_s=675±20 °C, during the time required for the surface phase formation, after which gate of cell Gd is closed and heterostructure is cooled to room temperature, wherein the material consisting of a graphene structure and a sub-monolayer periodic structure of metal atoms is made with charge carrier mobility in the graphene structure of 2500÷3000 cm²⋅B^-1⋅s^-1.

EFFECT: achieving high mobility of spin-polarized charge carriers.

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