METHOD FOR CREATING OXIDATION-RESISTANT ULTRA-FINE GRAPHENE STRUCTURES WITH SPIN-POLARIZED CHARGE CARRIERS Russian patent published in 2023 - IPC H01L21/00 

FIELD: graphene structures.

SUBSTANCE: methods for the formation of heterostructures, namely graphene structures, showing the spin polarization of charge carriers, which can be used to create ultra-compact spintronic devices. To achieve it, a method has been proposed for creating oxidation-resistant ultrafine graphene structures with spin-polarized charge carriers, which consists in the fact that the Eu surface phase, which is a submonolayer periodic structure of Eu atoms, is formed by the method of molecular beam epitaxy by Eu deposition. Eu is produced on a preformed graphene/SiO₂/Si(001) heterostructure, in which the silicon oxide layer is removed from under the graphene by annealing the heterostructure at a temperature of T_s=950±20°C, while the surface phase Eu 1×6 is formed under graphene on the surface of the Si(001) substrate by opening the damper of the Eu cell, which ensures the deposition of Eu atoms at a pressure of P_Eu=(0.3÷10)⋅10^-8 Torr flow of Eu atoms to the heterostructure maintained at a temperature of T_s=700±20°C, during the time required for the formation of the surface phase, after which the shutter of the Eu cell is closed and the heterostructure is cooled to room temperature.

EFFECT: ultimate reduction in the thickness of functional graphene structures with spin-polarized charge carriers while maintaining oxidation resistance.

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