METHOD FOR MONITORING AND CONTROLLING THE TEMPERATURE REGIME OF THE GROWTH SURFACE OF THE SUBSTRATE Russian patent published in 2021 - IPC C23C16/52 C23C16/513 C23C16/458 C23C16/27 

FIELD: temperature regime controlling.

SUBSTANCE: invention relates to a method for controlling the temperature regime of the growth of a diamond film on the surface of at least one hard alloy substrate. The main conducting platform is placed in a sealed axisymmetric vacuum chamber of a SHF plasma reactor with a uniform temperature field, while the central part of the said chamber is made in the form of a SHF resonator. Equally high substrates are placed inside a stationary conducting out-of-limit ring in the form of a plasma-forming cassette on its movable cooled base connected to the actuator. The inner base of the beyond ring is made as part of the main conductive platform and with a gap with the main conductive platform to ensure its relative movement inside the said main conductive platform axially to the SHF resonator. Air is evacuated from the said vacuum chamber. A gas mixture is fed into it to deposit a diamond film. The temperature of the substrate is regulated by positioning the position of the substrate when displacing the movable base of the out-of-limit conducting ring using an actuator through the cooling pipeline. The cooling pipeline is made axially symmetric to the movable base of the transcendental ring, axially to the axis of the SHF plasma reactor resonator using feedback with an optical infrared pyrometer. The movable base of the beyond ring and the main conductive platform have independent cooling systems.

EFFECT: automation of the substrate temperature control is provided when the substrate heating temperature is stabilized and the growth rate of the diamond film is stabilized to obtain an adhesive strong structure of a single-layer or multilayer coating from a gas phase in a SHF plasma.

2 cl, 5 dwg, 1 tbl, 1 ex