SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2021 - IPC H01L27/06 

FIELD: electricity.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of capacitors with low leakage currents. Method of making a semiconductor device involves forming a two-layer barium titanate dielectric BaTiO₃ by magnetron HF sputtering, at oxygen pressure 13.3⋅10^-4 Pa, HF power 5 W⋅cm^-2 and deposition rate of 0.3 nm/s: lower layer - polycrystalline with thickness of 300 nm, at temperature of substrate 600 °C, upper layer - amorphous with thickness of 20 nm, at substrate temperature 450 °C.

EFFECT: technical result consists in improvement of percentage yield of non-defective devices and improvement of their reliability.

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