SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/336 H01L21/316 

FIELD: physics.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of field-effect transistor with high slope of characteristic. Technology of the method consists in the following: on plates of p-type silicon of conductivity with specific resistance of 10 Ohm*cm, orientation (100) film of bismuth titanate is applied by HF sputtering. Spraying is carried out in argon-oxygen gas mixture at pressure of 6 * 10^-3 mm Hg and temperature of 675  C with subsequent heat treatment at temperature of 600 °C for 35 s in argon medium. Field transistor regions and contacts to these regions are then formed according to standard technology.

EFFECT: invention provides improved parameters of devices, high quality and percentage yield of suitable.

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