FIELD: chemistry.
SUBSTANCE: use: for metallization of the dielectric material of a component of electronic microwave technology. This invention’s essence consists in that the method includes forming a protective layer on the surface of the dielectric material of the component, with the exception of its face, by immersing it in a solution based on a polymeric material located on a carrier substrate of a high temperature material, followed by its purification, then followed by formation of a metallization coating on the face of the dielectric material of the component consisting of two parts, the first part is formed by the method of vacuum deposition of the metal system, the second part is formed by galvanic expansion of a given thickness, then followed by removal of non-working materials, wherein to form said protective layer, a solution based on a high temperature polyimide varnish is used, then the metallization coating of the first and second parts is formed to ensure their selective etching, prior to forming the second part of the metallization coating, a second protective layer from the masking photoresist of a given topology and less than 2 microns thickness is formed over the entire face of the first portion of the metallization coating, by applying a photoresist film using centrifugation method and then exposing it over its entire surface for a predetermined period of time that provides the formation of the given topology of the masking photoresist, and the second part of the metallization coating is formed locally through this masking photoresist, the removal of the non-working materials is carried out in the following sequence - a photoresist film, selectively the metallized coatings outside the face of the dielectric material of the component and the first protective layer.
EFFECT: technical result is to provide an opportunity to improve the quality of the metallization coating of a dielectric material.
6 cl, 1 tbl
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Authors
Dates
2018-05-23—Published
2017-03-06—Filed