FIELD: electrical engineering.
SUBSTANCE: invention relates to a semiconductor technique. Essence of the invention consists in the formation of a sensor structure of gaseous toxic substances based on graphene films. According to the invention, graphene films on the surface of silicon carbide are obtained by thermal degradation. Etching of the graphene film is carried out by the ion beam method using a photoresist mask, metallization of the electrodes is performed by explosive photolithography, then a nickel coating is deposited on the ohmic contacts, followed by the formation of the topology of the amplification of the contact areas. Method can be used in the industrial production of graphene based sensors.
EFFECT: technical result is the achievement of the limit of graphene sensitivity to a variety of toxic gaseous substances.
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