SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/316 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of protective insulating film with low defectiveness. Method of making a semiconductor device involves forming on a silicon substrate silicate glass arsenide at a deposition rate of 5 nm/min, by oxidation upon supply to reactor of 1 % silane SiH₄ in an argon flow of 380 cm³/min, 1 % AsH₃ in an argon flow of 40 cm³/min and oxygen flow rate O₂ 80 cm³/min at temperature 500 °C with subsequent heat treatment at temperature of 1,100 °C for 5 hours in argon medium.

EFFECT: invention provides reduced values of leakage current, improved manufacturability, improved parameters of instruments, high quality and high percentage yield.

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