METHOD FOR CREATING SUBMONOLAYER TWO-DIMENSIONAL FERROMAGNETIC MATERIALS INTEGRATED WITH SILICON Russian patent published in 2023 - IPC B82B3/00 

FIELD: two-dimensional magnetic materials production.

SUBSTANCE: invention relates to methods for producing two-dimensional magnetic materials, namely submonolayer two-dimensional Eu-based materials on a Si(001) substrate, demonstrating ferromagnetic properties. To achieve the effect, a method is proposed for creating submonolayer two-dimensional ferromagnetic materials integrated with silicon, which consists in the deposition of Eu atoms at a pressure of P_Eu=(0.3÷10)⋅10^-8 Torr of the flow of Eu atoms on the Si( 001) maintained at 705°C<T_s<735°C until an Eu submonolayer is formed with a coverage of 1/2 monolayer, or maintained at a temperature of 610°C<T_s<640°C until an Eu submonolayer is formed with a coverage of 3/5 monolayer, or maintained at a temperature of 480°C<T_s<510°C until the formation of a Eu submonolayer with a coverage degree of 2/3 of the monolayer, while the degree of coverage in a monolayer is taken to be the surface coverage by the number of atoms equal to the number of surface Si(001) atoms.

EFFECT: limiting decrease in the thickness of the functional layer of a two-dimensional ferromagnetic material for silicon nanoelectronics and spintronics devices formed on Si(001) substrates.

1 cl, 4 dwg