FIELD: electricity.
SUBSTANCE: nitride semiconductor element comprises a sapphire substrate containing: main surface extending in a c-plane of the sapphire substrate and a plurality of projections disposed on the main surface, plurality of projections comprises at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate.
EFFECT: at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, outer edge extending in a direction oriented at an angle in a range of -10 to +10° with respect to an a-plane of the sapphire substrate in the plan view.
15 cl, 14 dwg
