SWITCHING ELEMENT AND METHOD FOR MANUFACTURING THEREOF Russian patent published in 2018 - IPC H01L29/78 H01L21/336 

FIELD: electrical engineering.

SUBSTANCE: switching element includes a semiconductor substrate that includes a first n-type semiconductor layer, a p-type base layer formed by the epitaxial layer, and a second n-type semiconductor layer separated from the first layer of the n-type semiconductor by the base layer, insulating the gate film that covers the zone overlapping the surface of the first layer of the n-type semiconductor, the surface of the base layer and the surface of the second layer of the n-type semiconductor, as well as the gate electrode that is located opposite the base layer within the gate insulating film. Interface between the first n-type semiconductor layer and the base layer includes an inclined surface. Inclined surface is inclined in such a way that the depth of the base layer increases as the distance in the horizontal direction increases from the edge of the base layer. Inclined surface is located under the gate electrode.

EFFECT: invention provides a more effective attenuation of the electric field acting on the gate insulating film.

5 cl, 13 dwg