NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE Russian patent published in 2019 - IPC H01L29/78 H01L21/336 

FIELD: physics.

SUBSTANCE: nitride semiconductor device includes a nitride semiconductor layer, an insulating gate film, a source electrode, a drain electrode and a gate electrode. Nitride semiconductor layer includes the first base layer, the second base layer, the drift layer, the first source layer and the second source layer. Drift layer includes a first drift layer that extends from a contact position with a lower surface of the first base layer to a touch position with a lower surface of the second base layer, and an electric field attenuation layer, which is in contact with the lower base first side layer lower extreme portion and the base second base layer lower extreme portion, is in contact with the first drift layer and has impurity concentration of the second conductivity type lower than that of the first drift layer.

EFFECT: invention provides a vertical nitride semiconductor device adapted to attenuate the electric field surrounding the lower extreme portion of the base layer on the side of the intermediate section, and a method of producing such a device.

7 cl, 15 dwg