SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2024 - IPC H01L21/283 

FIELD: various technological processes.

SUBSTANCE: invention relates to production of semiconductor devices. Method according to invention is implemented as follows: drain and source areas, gate electrode, titanium nitride barrier layer, wherein the titanium nitride TiN barrier layer is formed by high-frequency spraying at a power input of 1 kW and a nitrogen pressure of 10 Pa at an application rate of 10 nm/min, with thickness of 150 nm, with subsequent annealing in a nitrogen atmosphere at temperature of 600 °C for 10 minutes.

EFFECT: invention ensures reduction of leakage current values, improvement of manufacturability, improvement of parameters of devices, improvement of quality and increase in percentage yield.

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