SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2024 - IPC H01L21/30 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to production of field-effect transistors. Technology of the method consists in the following: on silicon wafers of n-type conductivity with specific resistance of 4.5 Ohm*cm, orientation (100) forms a layer of gate oxide at temperature of 1,200 °C for 14 minutes in a flow of dried oxygen 1,500 cm³/min. Chlorine is added to the oxide by adding to oxygen nitrogen 60 cm³/min passed through a vessel with trichlorethylene at temperature of 34 °C. Before unloading from the reactor, the substrates are annealed in a nitrogen flow at temperature of 650 °C, for 2 minutes, and then slowly, in order to avoid formation of strains of the crystal lattice, is removed from the zone of maximum heating. Active areas of the field-effect transistor and contacts are formed according to the standard technology.

EFFECT: invention provides higher stability of parameters and reduced defectiveness due to the fact that chlorine atoms bind and neutralize mobile ions in oxide near silicon surface.

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