METHOD OF MAKING METAL INTERCONNECTIONS Russian patent published in 2022 - IPC H01L21/3205 H01L21/768 

FIELD: technological processes.

SUBSTANCE: invention relates to production of semiconductor devices, in particular, to production of interconnections with low resistance value. Technology of the method consists in the following: by electron-beam evaporation, a lower layer of chromium with thickness of 5–20 nm is applied at a deposition rate of 0.1 nm/s at pressure of 10^-9 mm Hg, then a layer of copper with thickness of 450 nm is applied at a deposition rate of 0.5 nm/s, then an upper layer of chromium with thickness of 5–30 nm at a deposition rate of 0.1 nm/s, followed by annealing at temperature of 400 °C in an Ar-H₂ atmosphere for 30 minutes. Active areas of the semiconductor device and electrodes to them were formed according to the standard technology.

EFFECT: invention provides for reduction of resistance, improvement of parameters of devices, improvement of quality and increase in percentage yield.

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