ATOMISED TARGET Russian patent published in 2020 - IPC C23C14/34 B22D7/00 C22C19/07 

FIELD: chemistry.

SUBSTANCE: group of inventions relates to making a sputtered target. Disclosed is a method of making a sputtered target, in which a molten mixture is formed, consisting of compounds selected from a group comprising CoB, FeB and CoFeB, pouring molten mixture into a mould for forming a directed cast ingot, annealing is performed and a target ingot is cut, which has purity higher than 99.99 %, oxygen content is 40 md or less and a columnar microstructure formed by borides. Disclosed also is a method of making a sputtering target for magnetoresistive memory devices, in which a molten mixture containing (i) B and (ii) Co, Fe, Ni, Mn, C or Al is formed. Disclosed is a sputtering target having a columnar microstructure formed by intermetallic compounds B with Co and Fe, wherein the sputtering target has a purity higher than 99.99 % and an oxygen content of 40 md or less.

EFFECT: obtaining sputtered targets without cracks, with high PTF and purity and low dispersion.

20 cl, 4 dwg, 1 tbl