FIELD: technological processes.
SUBSTANCE: invention relates to preparation of substrate surface from aluminum nitride ceramics for thin-film metallization. In thin-film metallization method of substrates from aluminonitride ceramics, including substrate cleaning, deposition of a metal coating system by vacuum deposition, the first layer of which is a metal which chemically interacts with aluminum oxide, and the second copper, directly before sputtering of metals, by plasma treatment on the surface of the substrate, a layer of α-Al2O3 is formed. First layer of metallization preferably is selected from vanadium, niobium or tantalum.
EFFECT: high-quality formation of metallization systems, resistors, and other elements on aluminum nitride-based ceramic substrates, using methods used by traditional methods for ceramics based on aluminum oxide.
1 cl, 1 dwg
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