METHOD OF MAKING CONTACTS Russian patent published in 2024 - IPC H01L21/285 

FIELD: technology for production of semiconductor devices.

SUBSTANCE: invention relates to the technology of making thermostable contacts with low resistance. Method of making contacts of a semiconductor device includes forming a barrier layer based on tantalum nitride TaN on a silicon substrate, wherein the TaN-based barrier layer is formed by reactive sputtering in a mixture of Ar+10%N₂, at a temperature of Si-substrates of 400 °C, pressure of 10–4 Pa, thickness of 30 nm, at an application rate of 1.5 nm/min, with subsequent heat treatment of structures at temperature of 500 °C in vacuum for 30 minutes.

EFFECT: invention provides reduction of contact resistance, manufacturability, improvement of parameters of devices, improvement of quality and increase in percentage yield.

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